Document Type
Patent
Publication Date
11-29-2016
Patent Number
9506166
CPC
C30B 13102 (2013.01); COIF 1710025 (2013.01)
Abstract
Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a garnet-based activator region and a garnet-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing epitaxial layers on a host. A YAG host material can be doped in one region with a suitable activator ion for lasing and can be formed with another region that is doped with a saturable absorber to form the Q-switch. Regions can be formed with controlled thickness in conjunction. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
Application Number
14/332672
Assignees
Clemson University (Clemson, SC, US)
Filing Date
07/16/2014
Primary/U.S. Class
1/1