Document Type

Article

Publication Date

1-2015

Publication Title

Journal of Materials Research

Volume

30

Issue

9

Publisher

Cambridge University Press

Abstract

We describe measurements aimed at tracking the subsurface energy deposition of ionic radiation by encapsulating an irradiated oxide target within multiple, spatially separated metal–oxide–semiconductor (MOS) capacitors. In particular, we look at incident kinetic energy and potential energy effects in the low keV regime for alkali ions (Na+) and multicharged ions (MCIs) of ArQ+ (Q = 1, 4, 8, and 11) incident on the as-grown layers of SiO2on Si. With the irradiated oxide encapsulated under Al top contacts, we record an electronic signature of the incident ionic radiation through capacitance–voltage (C–V) measurements. Both kinetic and potential energy depositions give rise to shifted C–V signatures that can be directly related to internal electron–hole pair excitations. The MCI data reveal an apparent power law dependence on charge state, which is at odds with some prior thin foil studies obtained at higher incident energies.

Comments

This manuscript has been published in the Journal of Materials Research. Please find the published version here (note that a subscription is necessary to access this version):

https://www.cambridge.org/core/journals/journal-of-materials-research/article/tracking-subsurface-ion-radiation-damage-with-metaloxidesemiconductor-device-encapsulation/16996E4330E169D6DF1549A2F05F55F5

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