Low Energy Ion Irradiation Effects in Electronic Devices and Materials

Author

David C. McCall, Clemson UniversityFollow

Date of Award

8-2025

Document Type

Dissertation

Degree Name

Doctor of Philosophy (PhD)

Department

Physics and Astronomy

Committee Chair/Advisor

Chad Sosolik

Committee Member

William Harrell

Committee Member

Joan Marler

Committee Member

Brad Meyer

Abstract

The physics and engineering of ion-solid interactions are governed by the ion beam characteristics (flux, charge, energy) and target(s) in question. Here I present work on two projects related to the extraction of a high flux of low charge state Argon ions from a commercial plasma source and the irradiation of an engineered target, a transistor, with high charge state Argon ions.

An end-Hall ion source that produces a a high current plasma of ions and electrons in a rough vacuum environment is characterized. Using a Langmuir probe and multiple pressure measurements, the ion and electron content of the source flux is examined as a function of source operating parameters. In addition the heat load and flux-induced damage on the target and support structure is evaluated in relation to the application of this source for future high flux studies.

The effects of multiply charged ion damage on a semiconductor polymer, P3HT, is also examined using organic thin film transistors (OTFTs) with P3HT as a channel material. The current-voltage characteristics pre- and post-irradiation with Ar8+ ions are compared to determine the role of ion energy and charge in the damage or modification of the polymer layer.

Recommended Citation

McCall, David C., "Low Energy Ion Irradiation Effects in Electronic Devices and Materials" (2025). All Dissertations. 3971.
https://open.clemson.edu/all_dissertations/3971

Author ORCID Identifier

0009-0005-3115-0225