Synthesis and Characterization of VO2 Thin Films on Piezoelectric Substrates

Author

Samee AzadFollow

Date of Award

12-2022

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical and Computer Engineering (Holcomb Dept. of)

Committee Chair/Advisor

Goutam Koley

Committee Member

Judson Ryckman

Committee Member

Apparao Rao

Abstract

Polycrystalline VO₂ thin films synthesized on two piezoelectric substrates (AT-cut quartz and GaN/AlGaN/GaN/Si) using low pressure direct oxidation technique have been characterized and compared to VO₂ grown on traditional non-piezoelectric substrates sapphire and SiO₂/Si. X-ray diffraction and atomic force microscopy characterization performed on the as grown films confirmed high quality of the VO₂ films grown on both the piezoelectric and non-piezoelectric substrates. Changes in material properties associated with the semiconductor metal transition (SMT) of the VO₂ films were investigated through resistivity and transmitted optical power changes measured across the SMT. It was observed that the VO₂ films grown on the piezoelectric substrates are of high quality, and their electrical and optical properties changes are quite comparable to the best reported values on films synthesized on various substrates using different synthesis processes.

Recommended Citation

Azad, Samee, "Synthesis and Characterization of VO2 Thin Films on Piezoelectric Substrates" (2022). All Theses. 3912.
https://open.clemson.edu/all_theses/3912